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| SUD50N06-07L New Product Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (W) 0.0074 @ VGS = 10 V 0.0088 @ VGS = 4.5 V ID (A)c 96 88 D TrenchFETr Power MOSFETS D 175_C Junction Temperature APPLICATIONS D Automotive Such As: - High-Side Switch - Motor Drives - 12-V Battery D Secondary Synchronous Rectification D TO-252 G Drain Connected to Tab G D S S N-Channel MOSFET Top View Ordering Information: SUD50N06-07L--E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Single Pulse Avalanche Current Single Pulse Repetitive Avalanche Energya Power Dissipation Operating Junction and Storage Temperature Range L = 0 1 mH 0.1 TC = 25_C TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IAS EAS PD TJ, Tstg Limit 60 "20 96c 67c 100 45 101 136 -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientb J ti t A bi t Junction-to-Case t v 10 sec Steady State Symbol RthJA RthJC Typical 15 40 0.85 Maximum 18 50 1.1 Unit _C/W C/W Notes: a. Duty cycle v 1%. b. Surface mounted on 1" FR4 board. c. Based on maximum allowable Junction Temperature. Package limitation current is 50 A. Document Number: 72953 S-41133--Rev. A, 07-Jun-04 www.vishay.com 1 SUD50N06-07L Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V Zero Gate Voltage Drain Current g On-State Drain Currenta IDSS ID(on) VDS = 60 V, VGS = 0 V, TJ = 125_C VDS = 60 V, VGS = 0 V, TJ = 175_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A Drain-Source On-State Drain Source On State Resistancea rDS( ) DS(on) VGS = 10 V, ID = 20 A, TJ = 125_C VGS = 10 V, ID = 20 A, TJ = 175_C VGS = 4.5 V, ID = 20 A Forward Transconductancea gfs VDS = 15 V, ID = 15 A 20 0.0071 80 50 0.0061 0.0074 0.0122 0.0148 0.0088 S W 60 1 3 "100 1 50 150 A m mA V nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Chargec Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = 30 V, RL = 0.6 W ID ] 50 A, VGEN = 10 V, Rg = 2.5 W VDS = 30 V, VGS = 10 V, ID = 50 A , , VGS = 0 V, VDS = 25 V, f = 1 MHz 5800 450 300 96 19 20 1.5 15 13 62 14 25 20 95 25 ns W 144 nC pF Gate-Drain Chargec Gate Resistance Turn-On Delay Rise Timec Turn-Off Delay Timec Fall Timec Timec Source-Drain Ciode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Is ISM VSD trr IF = 30 A, VGS = 0 V IF = 30 A, di/dt = 100 A/ms 0.90 37 50 100 1.50 55 A V ns Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 72953 S-41133--Rev. A, 07-Jun-04 SUD50N06-07L New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 120 VGS = 10 thru 4 V 100 I D - Drain Current (A) I D - Drain Current (A) 80 60 40 20 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 100 80 60 40 TC = 125_C 20 0 0.0 25_C -55_C 2.5 3.0 3.5 4.0 120 Vishay Siliconix Transfer Characteristics 3V 0.5 1.0 1.5 2.0 VGS - Gate-to-Source Voltage (V) Transconductance 200 TC = -55_C r DS(on) - On-Resistance ( ) 160 g fs - Transconductance (S) 25_C 125_C 0.012 0.015 On-Resistance vs. Drain Current 120 0.009 VGS = 4.5 V 80 0.006 VGS = 10 V 0.003 40 0 0 10 20 30 40 50 60 VGS - Gate-to-Source Voltage (V) 8000 7000 6000 5000 4000 3000 2000 1000 0 0 Crss 10 20 30 40 50 60 Coss Ciss V GS - Gate-to-Source Voltage (V) 0.000 0 20 40 60 80 100 ID - Drain Current (A) 10 VDS = 30 V ID = 50 A Capacitance Gate Charge 8 C - Capacitance (pF) 6 4 2 0 0 20 40 60 80 100 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Document Number: 72953 S-41133--Rev. A, 07-Jun-04 www.vishay.com 3 SUD50N06-07L Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2.0 On-Resistance vs. Junction Temperature VGS = 10 V ID = 20 A I S - Source Current (A) Source-Drain Diode Forward Voltage 100 1.7 rDS(on) - On-Resiistance (Normalized) TJ = 150_C TJ = 25_C 10 1.4 1.1 0.8 0.5 -50 -25 0 25 50 75 100 125 150 175 1 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (_C) THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 125 Safe Operating Area 200 100 Limited by rDS(on) 10 ms 100 ms I D - Drain Current (A) 100 I D - Drain Current (A) 75 10 1 ms 10 ms dc, 100 ms 50 Limited By Package 1 TC = 25_C Single Pulse 0.1 25 0 0 25 50 75 100 125 150 175 TC - Case Temperature (_C) 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) 2 1 Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Case Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 www.vishay.com 4 Document Number: 72953 S-41133--Rev. A, 07-Jun-04 |
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